參數(shù)資料
型號(hào): M58MR016C
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 6/51頁(yè)
文件大小: 389K
代理商: M58MR016C
M58MR016C, M58MR016D
6/51
V
PP
Program Supply Voltage (12V).
V
PP
is both
a control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin; if V
PP
is kept in a low voltage range
(0 to 2V) V
PP
is seen as a control input, and the
current absorption is limited to 5μA (0.2μA typical).
In this case with V
PP
= V
IL
we obtain an absolute
protection against program or erase; with V
PP
=
V
PP1
these functions are enabled (see Table 26).
V
PP
value is only sampled during program or
erase write cycles; a change in its value after the
operation has been started does not have any ef-
fect and program or erase are carried on regularly.
If V
PP
is used in the 11.4V to 12.6V range (V
PPH
)
then the pin acts as a power supply (see Table
26). This supply voltage must remain stable as
long as program or erase are running. In read
mode the current sunk is less then 0.5mA, while
during program and erase operations the current
may increase up to 10mA.
V
SS
Ground.
V
SS
is the reference for all the volt-
age measurements.
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