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參數資料
| 型號： | M58MR016C |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數： | 20/51頁 |
| 文件大?。?/td> | 389K |
| 代理商： | M58MR016C |
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M58MR016C, M58MR016D
20/51
POWER CONSUMPTION
Power-down
The memory provides Reset/Power-down control
input RP. The Power-down function can be acti-
vated only if the relevant Read Configuration Reg-
ister bit is set to ’1’. In this case, when the RP
signal is pulled at V
SS
the supply current drops to
typically I
CC2
(see Table 26), the memory is dese-
lected and the outputs are in high impedance. If
RP is pulled to V
SS
during a Program or Erase op-
eration, this operation is aborted and the memory
content is no longer valid (see Reset/Power-down
input description).
Power-up
The memory Command Interface is reset on Pow-
er-up to Read Array. Either E or W must be tied to
V
IH
during Power-up to allow maximum security
and the possibility to write a command on the first
rising edge of W. At Power-up the device is config-
ured as:
– Page mode: (CR15 = 1)
– Power-down disabled: (CR10 = 0)
– BINV disabled: (CR14 = 0).
All blocks are protected and unlocked.
V
DD
, V
DDQ
and V
PP
are independent power sup-
plies and can be biased in any order.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V
DD
rails decoupled with a 0.1μF capac-
itor close to the V
DD
, V
DDQ
and V
SS
pins. The PCB
trace widths should be sufficient to carry the re-
quired V
DD
program and erase currents.
Figure 6. X-Latency Configuration Sequence
AI05233
A19-A16
VALID ADDRESS
K
L
ADQ15-ADQ0
VALID ADDRESS
VALID DATA
VALID DATA
ADQ15-ADQ0
VALID ADDRESS
VALID DATA
ADQ15-ADQ0
VALID ADDRESS
VALID DATA
VALID DATA
VALID DATA
CONFIGURATION CODE 4
CONFIGURATION CODE 3
CONF. CODE 2
VALID DATA
VALID DATA
VALID DATA
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相關代理商/技術參數 |
參數描述 |
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| M58MR016C120ZC6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR016CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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