參數(shù)資料
型號: M58MR016C
廠商: 意法半導體
英文描述: 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,復用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 40/51頁
文件大小: 389K
代理商: M58MR016C
M58MR016C, M58MR016D
40/51
Figure 16. Program Flowchart and Pseudo Code
(1)
Note: 1. Status check of b1 (Protected Block), b3 (V
PP
Invalid) and b4 (Program Error) can be made after each program operation or after
a program sequence.
2. If an error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.
Write 40h or 10h
Command
AI05243
Start
Write Address
& Data
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
Program instruction:
– write 40h or 10h command
– write Address & Data
(memory enters read status state after
the Program instruction)
do:
– read status register (E or G must be
toggled) if PES instruction given execute
suspend program loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4 = 1, Program error:
– error handler
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
If b1 = 1, Program to protected block error:
– error handler
Suspend
Suspend
Loop
NO
YES
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