參數(shù)資料
型號： M58MR016C
廠商： 意法半導體
英文描述： 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 25/51頁
文件大?。?/td> 389K
代理商： M58MR016C
25/51
M58MR016C, M58MR016D
Table 20. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0015h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
8 Byte
2Ch
0003h
Number of Erase Block Regions within the device
bit 7 to 0 = x = number of Erase Block Regions
It specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size.
3
M
2Dh
2Eh
0017h
0000h
Region 1 Information (main block - Bank B)
Number of identical-size erase block = 002Fh+1
24
2Fh
30h
0000h
0001h
Region 1 Information (main block - Bank B)
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0006h
0000h
Region 2 Information (main block - Bank A)
Number of identical-size erase block = 0006h+1
7
33h
34h
0000h
0001h
Region 2 Information (main block - Bank A)
Block size in Region 2 = 0100h * 256 byte
64 KByte
35h
36h
0007h
0000h
Region 3 Information (parameter block - Bank A)
Number of identical-size erase block = 0007h+1
8
37h
38h
0020h
0000h
Region 3 Information (parameter block - Bank A)
Block size in Region 3 = 0020h * 256 byte
8 KByte
M
2Dh
2Eh
0007h
0000h
Region 1 Information (parameter block - Bank A)
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information (parameter block - Bank A)
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
0006h
0000h
Region 2 Information (main block - Bank A)
Number of identical-size erase block = 0006h+1
7
33h
34h
0000h
0001h
Region 2 Information (main block - Bank A)
Block size in Region 2 = 0001h * 256 byte
64 KByte
35h
36h
0017h
0000h
Region 3 Information (parameter block - Bank B)
Number of identical-size erase block = 002Fh+1
24
37h
38h
0000h
0001h
Region 3 Information (parameter block - Bank B)
Block size in Region 3 = 0001h * 256 byte
64 KByte
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58MR016C120ZC6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58MR016CZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016DZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016-ZCT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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