參數(shù)資料
型號: M58MR016C
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 33/51頁
文件大?。?/td> 389K
代理商: M58MR016C
33/51
M58MR016C, M58MR016D
Table 28. Synchronous Burst Read AC Characteristics
(T
A
= –40 to 85°C; V
DD
= V
DDQ
= 1.7V to 2.0V)
Symbol
Alt
Parameter
Test Condition
M58MR016
Unit
100
120
Min
Max
Min
Max
t
AVK
t
AVCLKH
Address Valid to Clock
7
7
ns
t
ELK
t
CELCLKH
Chip Enable Low to Clock
7
7
ns
t
K
t
CLK
Clock Period
25
25
ns
t
KAX
t
CLKHAX
Clock to Address Transition
E = V
IL
, G = V
IH
13
13
ns
t
KHKL
t
CLKHCLKL
Clock High
5
5
ns
t
KLKH
t
CLKLCLKH
Clock Low
5
5
ns
t
KQV
t
CLKHQV
Clock to Data Valid
Clock to BINV Valid
Clock to WAIT Valid
E = V
IL
, G = V
IL
20
20
ns
t
KQX
t
CLKHQX
Clock to Output Transition
Clock to BINV Transition
Clock to WAIT Transition
E = V
IL
4
4
ns
t
LHAX
t
ADVHAX
Latch Enable High to
Address transition
13
13
ns
t
LLK
t
AVDLCLKH
Latch Enable Low to Clock
7
7
ns
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