- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359083 > M58MR016C (意法半導體) 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M58MR016C |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 27/51頁 |
| 文件大?。?/td> | 389K |
| 代理商： | M58MR016C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
27/51
M58MR016C, M58MR016D
Table 22. Burst Read Information
Table 23. Security Code Area
Offset
Data
Description
Value
(P)+13h = 48h
0003h
Page-mode read capability
bits 0-7
’n’ such that 2
n
HEX value represents the number of read-
page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates
no read page buffer.
8 Byte
(P+14)h = 49h
0003h
Number of synchronous mode read configuration fields that follow. 00h
indicates no burst capability.
3
(P+15)h = 4Ah
0001h
Synchronous mode read capability configuration 1
bit 3-7
bit 0-2
Reserved
’n’ such that 2
n+1
HEX value represents the maximum
number of continuous synchronous reads when the device is
configured for its maximum word width. A value of 07h
indicates that the device is capable of continuous linear bursts
that will output data until the internal burst counter reaches
the end of the device’s burstable address space. This field’s
3-bit value can be written directly to the read configuration
register bit 0-2 if the device is configured for its maximum
word width. See offset 28h for word width to determine the
burst data output width.
4
(P+16)h = 4Bh
0002h
Synchronous mode read capability configuration 2
8
(P+17)h = 4Ch
0007h
Synchronous mode read capability configuration 3
Cont.
(P+18)h = 4Dh
0028h
Max operating clock frequency (MHz)
40 MHz
(P+19)h = 4Eh
0001h
Supported handshaking signal (WAIT pin)
bit 0
bit 1
during synchronous read
during asynchronous read
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
Yes
No
Offset
80h
81h
82h
83h
84h
85h
86h
87h
88h
Data
Description
0000-0000-0000-0XX0
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
Lock Protection Register
64 bits: unique device number
64 bits: User Programmable OTP
相關PDF資料 |
PDF描述 |
|---|---|
| M58MR032C | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58WR032F-ZBF | CAP 560PF 100V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF |
| M58WR032F-ZBE | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR016C120ZC6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR016CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。