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參數資料
| 型號： | M58MR016C |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，復用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數： | 4/51頁 |
| 文件大?。?/td> | 389K |
| 代理商： | M58MR016C |
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M58MR016C, M58MR016D
4/51
The architecture includes a 128 bit Protection reg-
ister that is divided into two 64 bit segments. In the
first one is written a unique device number, while
the second one is programmable by the user. The
user programmable segment can be permanently
protected programming the bit 1 of the Protection
Lock Register (see protection register and Securi-
ty Block). The parameter block (# 0) is a security
block. It can be permanently protected by the user
programming the bit 2 of the Protection Lock Reg-
ister.
Block protection against Program or Erase pro-
vides additional data security. All blocks are pro-
tected and unlocked at Power-up. Instructions are
provided to protect or un-protect any block in the
application. A second register locks the protection
status while WP is low (see Block Locking descrip-
tion).
Table 3. Bank Size and Sectorization
Bank Size
Parameter Blocks
Main Blocks
Bank A
4 Mbit
8 blocks of 4 KWord
7 blocks of 32 KWord
Bank B
12 Mbit
-
24 blocks of 32 KWord
Figure 3. Memory Map
AI05230
512 Kbit or
32 KWord
000000h
007FFFh
512 Kbit or
32 KWord
0F0000h
0F7FFFh
0F8000h
Top Boot Block
Address lines A19-A0
512 Kbit or
32 KWord
0B8000h
0BFFFFh
0C0000h
Total of 24
Main Blocks
512 Kbit or
32 KWord
0C7FFFh
64 Kbit or
4 KWord
0FF000h
0FFFFFh
64 Kbit or
4 KWord
0F8FFFh
Total of 7
Main Blocks
Total of 8
Parameter
Blocks
Bank B
Bank A
64 Kbit or
4 KWord
000000h
000FFFh
512 Kbit or
32 KWord
038000h
03FFFFh
040000h
Bottom Boot Block
Address lines A19-A0
64 Kbit or
4 KWord
007000h
007FFFh
008000h
Total of 8
Parameter
Blocks
512 Kbit or
32 KWord
00FFFFh
512 Kbit or
32 KWord
0F8000h
0FFFFFh
512 Kbit or
32 KWord
047FFFh
Total of 7
Main Blocks
Total of 24
Main Blocks
Bank B
Bank A
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相關代理商/技術參數 |
參數描述 |
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| M58MR016C120ZC6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58MR016CZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016DZC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR016-ZCT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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