參數(shù)資料
型號: MCIMX31_07
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Multimedia Applications Processors
中文描述: 多媒體應(yīng)用處理器
文件頁數(shù): 17/108頁
文件大?。?/td> 1235K
代理商: MCIMX31_07
Electrical Characteristics
i.MX31/i.MX31L Advance Information, Rev. 2.3
Freescale Semiconductor
17
The i.MX31/i.MX31L I/O parameters appear in
Table 12
for DDR (Double Data Rate). See
Table 7,
"Operating Ranges," on page 12
for temperature and supply voltage ranges.
NOTE
NVCC for
Table 12
refers to NVCC2, NVCC21, and NVCC22.
Input Hysteresis
V
HYS
Hysteresis enabled
0.25
V
Schmitt trigger VT+
V
T
+
Hysteresis enabled
0.5*QVCC
V
Schmitt trigger VT-
V
T
-
Hysteresis enabled
0.5*QVCC
V
Pull-up resistor (100 k
Ω
PU)
R
PU
100
k
Ω
Pull-down resistor (100 k
Ω
PD)
R
PD
100
Input current (no PU/PD)
I
IN
V
I
= NVCC or GND
±
1
μ
A
Input current (100 k
Ω
PU)
I
IN
V
I
= 0
V
I
= NVCC
25
0.1
μ
A
μ
A
Input current (100 k
Ω
PD)
I
IN
V
I
= 0
V
I
= NVCC
0.25
28
μ
A
μ
A
Tri-state leakage current
I
OZ
V
I
= NVCC or GND
I/O = High Z
±
2
μ
A
Table 12. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
High-level output voltage
V
OH
I
OH
= -1 mA
I
OH
= specified Drive
I
OL
= 1 mA
I
OL
= specified Drive
V
OH
=0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive
1
NVCC -0.12
V
0.8*NVCC
V
Low-level output voltage
V
OL
0.08
V
0.2*NVCC
V
High-level output current
I
OH
1
Use of DDR Drive can result in excessive overshoot and ringing.
-3.6
-7.2
-10.8
-14.4
mA
Low-level output current
I
OL
V
OL
=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive
1
3.6
7.2
10.8
14.4
mA
High-Level DC input voltage
V
IH
V
IL
I
OZ
0.7*NVCC
NVCC
NVCC+0.3
V
Low-Level DC input voltage
-0.3
0
0.3*NVCC
V
Tri-state leakage current
V
I
= NVCC or GND
I/O = High Z
±
2
μ
A
Table 11. GPIO DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
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