參數資料
型號: MT47H128M8HV-187ELIT:E
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封裝: 8 X 11.50 MM, FBGA-60
文件頁數: 27/133頁
文件大小: 9170K
Figure 74: REFRESH Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0
T1
Valid
REFRESH
T2
T3
tCKE (MIN)
CKE
Power-down1
entry
1 x tCK
NOP
Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the
REFRESH command. Precharge power-down entry occurs prior to tRFC (MIN) being satis-
fied.
Figure 75: ACTIVATE Command-to-Power-Down Entry
CK
CK#
Command
Don’t Care
T0
T1
Valid
ACT
T2
NOP
T3
tCKE (MIN)
CKE
Power-down1
entry
1 tCK
Address
VALID
Note: 1. The earliest active power-down entry may occur is at T2, which is 1 × tCK after the ACTI-
VATE command. Active power-down entry occurs prior to tRCD (MIN) being satisfied.
1Gb: x4, x8, x16 DDR2 SDRAM
Power-Down Mode
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
122
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
相關PDF資料
PDF描述
MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
MT55L256L18FT-12TR 256K X 18 ZBT SRAM, 9 ns, PQFP100
MT55L256L32FT-12 256K X 32 ZBT SRAM, 9 ns, PQFP100
相關代理商/技術參數
參數描述
MT47H128M8HV-25AT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EAT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EIT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25IT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM