參數(shù)資料
型號: MT47H128M8HV-187ELIT:E
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封裝: 8 X 11.50 MM, FBGA-60
文件頁數(shù): 84/133頁
文件大?。?/td> 9170K
AC Overshoot/Undershoot Specification
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 and Table 26.
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Parameter
Specification
-187E
-25/-25E
-3/-3E
-37E
-5E
Maximum peak amplitude allowed for overshoot area
0.50V
Maximum peak amplitude allowed for undershoot area
0.50V
Maximum overshoot area above VDD (see Figure 21)
0.5 Vns
0.66 Vns
0.80 Vns
1.00 Vns
1.33 Vns
Maximum undershoot area below VSS (see Figure 22)
0.5 Vns
0.66 Vns
0.80 Vns
1.00 Vns
1.33 Vns
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Parameter
Specification
-187E
-25/-25E
-3/-3E
-37E
-5E
Maximum peak amplitude allowed for overshoot area
0.50V
Maximum peak amplitude allowed for undershoot area
0.50V
Maximum overshoot area above VDDQ (see Figure 21)
0.19 Vns
0.23 Vns
0.28 Vns
0.38 Vns
Maximum undershoot area below VSSQ (see Figure 22)
0.19 Vns
0.23 Vns
0.28 Vns
0.38 Vns
Figure 21: Overshoot
Maximum amplitude
Overshoot area
VDD/VDDQ
VSS/VSSQ
V
olts
(V)
Time (ns)
Figure 22: Undershoot
VSS/VSSQ
Maximum amplitude
Undershoot area
Time (ns)
V
olts
(V)
1Gb: x4, x8, x16 DDR2 SDRAM
AC Overshoot/Undershoot Specification
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
54
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
相關(guān)PDF資料
PDF描述
MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
MT55L256L18FT-12TR 256K X 18 ZBT SRAM, 9 ns, PQFP100
MT55L256L32FT-12 256K X 32 ZBT SRAM, 9 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H128M8HV-25AT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EAT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EIT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25EL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HV-25IT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM