參數(shù)資料
型號(hào)： MT48LC4M16A2P-75:G
元件分類： DRAM
英文描述： 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 43/72頁(yè)
文件大小： 3455K
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM_2.fm - Rev. N 12/08 EN
48
2000 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16 SDRAM
Electrical Specifications
Table 18:
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11, 34 apply to entire table; notes appear on pages 50 and 51; VDD, VDDQ = +3.3V ±0.3V
AC Characteristics
Symbol
-6
-7E
-75
Units
Notes
Parameter
Min
Max
Min
Max
Min
Max
Access time from CLK
(positive edge)
CL = 3
tAC(3)
–
5.5
–
5.4
ns
CL = 2
tAC(2)
–––
5.4
–
6
ns
Address hold time
tAH
1
–
0.8
–
0.8
–
ns
Address setup time
tAS
1.5
–
1.5
–
1.5
–
ns
CLK high-level width
tCH
2.5
–
2.5
–
2.5
–
ns
CLK low-level width
tCL
2.5
–
2.5
–
2.5
–
ns
Clock cycle time
CL = 3
tCK(3)
6
–
7
–
7.5
–
ns
CL = 2
tCK(2)
–
7.5
–
10
–
ns
CKE hold time
tCKH
1
–0.8
–
ns
CKE setup time
tCKS
1.5
–
1.5
–
1.5
–
ns
CS#, RAS#, CAS#, WE#, DQM hold
time
tCMH
1
–0.8
–
ns
CS#, RAS#, CAS#, WE#, DQM setup
time
tCMS
1.5
–
1.5
–
1.5
–
ns
Data-in hold time
tDH
1
–
0.8
–
0.8
–
ns
Data-in setup time
tDS
1.5
–
1.5
–
1.5
–
ns
Data-out High-Z time
CL = 3
tHZ(3)
–
5.5
–
5.4
–
5.4
ns
CL = 2
tHZ(2)
–
5.4
–
6
ns
Data-out Low-Z time
tLZ
1–
ns
Data-out hold time (load)
tOH
2–
3–
ns
Data-out hold time (no load)
tOHN
1.8
–
1.8
–
1.8
–
ns
ACTIVE-to-PRECHARGE command
tRAS
42
120,000
37
120,000
44
120,000
ns
ACTIVE-to-ACTIVE command period
tRC
60
–
60
–
66
–
ns
ACTIVE-to-READ or WRITE delay
tRCD
18–15
–20–
ns
Refresh period (4,096 rows)
tREF
–
64
–
64
–
64
ms
Refresh period–Automotive
(4,096 rows)
tREF
AT
–16–16
–16
ms
AUTO REFRESH period
tRFC
60–66
–66–
ns
PRECHARGE command period
tRP
18
–
15
–
20
–
ns
ACTIVE bank a to ACTIVE bank b
command
tRRD
12–14
–15–
ns
Transition time
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
tWR
1 CLK
+ 6ns
–1 CLK
+ 7ns
–1 CLK
+ 7.5ns
––
12
–
14
–
15
–
ns
Exit SELF REFRESH-to-ACTIVE
command
tXSR
70–67
–75–
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48LC4M16A2P75ITG 制造商:Micron Technology Inc 功能描述:
MT48LC4M16A2P-75ITG 制造商: 功能描述:
MT48LC4M16A2P-7E 制造商:Micron Technology Inc 功能描述:SDRAM 64MBIT 133MHZ 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP, Memory Type:DRAM - Synchronous, Memory Configurat
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