參數(shù)資料
型號(hào)： S71PL191HB0BFI100
廠商： SPANSION LLC
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 9 X 13 MM, LEAD FREE, FBGA-73
文件頁數(shù)： 134/172頁
文件大?。?/td> 4662K
代理商： S71PL191HB0BFI100
48
S29PL127H/S29PL129H
S29PL127H_129H_00A1 May 7, 2004
Pr el i m i n ary
Figure 5. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 16 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write
Operation Status section for information on these status bits.
Any commands written during the chip erase operation are ignored. Note that
SecSi Sector, autoselect, and CFI functions are unavailable when a [program/
erase] operation is in progress. However, note that a hardware reset immedi-
ately terminates the erase operation. If that occurs, the chip erase command
sequence should be reinitiated once that bank has returned to reading array data,
to ensure data integrity.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note: See Table 16 for program command sequence.
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