- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192306 > S71PL191HB0BFI100 (SPANSION LLC) SPECIALTY MEMORY CIRCUIT, PBGA73 PDF資料下載
參數(shù)資料
| 型號(hào)： | S71PL191HB0BFI100 |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA73 |
| 封裝： | 9 X 13 MM, LEAD FREE, FBGA-73 |
| 文件頁(yè)數(shù)： | 172/172頁(yè) |
| 文件大?。?/td> | 4662K |
| 代理商： | S71PL191HB0BFI100 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)當(dāng)前第172頁(yè)
May 7, 2004 S29JL064HA1
S29JL064H
3
Pre l i m i n a r y
lowing removal of EEPROM devices. DMS will also allow the system software to
be simplified, as it will perform all functions necessary to modify data in file struc-
tures, as opposed to single-byte modifications. To write or update a particular
piece of data (a phone number or configuration data, for example), the user only
needs to state which piece of data is to be updated, and where the updated data
is located in the system. This is an advantage compared to systems where user-
written software must keep track of the old data location, status, logical to phys-
ical translation of the data onto the Flash memory device (or memory devices),
and more. Using DMS, user-written software does not need to interface with the
Flash memory directly. Instead, the user's software accesses the Flash memory
by calling one of only six functions.
The device offers complete compatibility with the JEDEC 42.4 sin-
gle-power-supply Flash command set standard. Commands are written to
the command register using standard microprocessor write timings. Reading data
out of the device is similar to reading from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by
using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2
(toggle bits). After a program or erase cycle has been completed, the device au-
tomatically returns to the read mode.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automat-
ically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of the sectors of memory. This can be achieved in-system or via
programming equipment.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consump-
tion is greatly reduced in both modes.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S71VS128RC0ZHK203 | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| S71VS128RC0ZHK2L2 | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| S71WS512ND0BAWEH | SPECIALTY MEMORY CIRCUIT, PBGA84 |
| S72NS512PE0AHGL02 | SPECIALTY MEMORY CIRCUIT, PBGA133 |
| S7911 | PIN PHOTO DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71PL254 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71PL254J | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71PL254J04BAW0Z0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
| S71PL254J04BAW0Z3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。