參數(shù)資料
型號： S71PL191HB0BFI100
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 9 X 13 MM, LEAD FREE, FBGA-73
文件頁數(shù)： 73/172頁
文件大?。?/td> 4662K
代理商： S71PL191HB0BFI100
70
64 Mb pSRAM (Supplier 1)
S71PL191_193Hx0_00A1 March 10, 2004
Adva nce
Inform at i o n
Operation Mode
Note: L = Low-level Input (VIL), H = High-level Input (VIH), X = VIH or VIL, High-Z = High impedance
Absolute Maximum Ratings
Note: (Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the device
DC Characteristics
Note: VIL(Min) -1.0 V with 10 ns pulse width; VIH(Max) VDD+1.0 V with 10 ns pulse width
Mode
CE1#
CE2
OE# WE#
LB#
UB#
Add
I/O1 to I/O8
I/O9 to I/O16
Power
Read (Word)
L
H
L
H
L
X
DOUT
IDDO
Read (Lower Byte)
L
H
L
H
L
H
X
DOUT
High-Z
IDDO
Read (Upper Byte)
L
H
L
H
L
X
High-Z
DOUT
IDDO
Write (Word)
L
H
X
L
X
DIN
IDDO
Write (Lower Byte)
L
H
X
L
H
X
DIN
Invalid
IDDO
Write (Upper Byte)
L
H
X
L
H
L
X
Invalid
DIN
IDDO
Outputs Disabled
L
H
X
High-Z
IDDO
Standby
H
X
High-Z
IDDS
Deep Power-down Standby
H
L
X
High-Z
IDDSD
Symbol
Rating
Value
Unit
VDD
Power Supply Voltage
-1.0 to 3.6
V
VIN
Input Voltage
-1.0 to 3.6
V
VOUT
Output Voltage
-1.0 to 3.6
V
Topr.
Operating Temperature
-25 to 85
°C
Tstrg.
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
0.6
W
IOUT
Short Circuit Output Current
50
mA
Table 10. DC Recommended Operating Conditions (TA = -25°C to 85°C)
Symbol
Parameter
Min
Typ.
Max
Unit
VDD
Power Supply Voltage
2.6
2.75
3.3
V
VIH
Input High Voltage
2.0
-
VDD + 0.3
(Note)
VIL
Input Low Voltage
-0.3 (Note
-
0.4
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