參數資料
型號: FW82801E
廠商: Intel Corp.
英文描述: Intel 82801E Communications I/O Controller Hub (C-ICH)
中文描述: 英特爾82801E通訊I / O控制器集線器(丙,出血)
文件頁數: 50/84頁
文件大小: 1196K
代理商: FW82801E
Intel
82801E C-ICH
50
Advance Information Datasheet
3.3.2.2
Test Straps
The 82801E C-ICH
’s TP[0] (Test Point) signal must be pulled to Vcc3_3 with an external
pull-up resistor.
The 82801E C-ICH
’s TP[1] must be routed to a test point with an option to jumper to Vcc1_8.
This test point is used for NAND tree testing. Otherwise jumper to Vcc1_8.
The 82801E C-ICH
’s TP[2] must be routed to a test point with an option to jumper to V
SS
.
This test point is used for NAND tree testing. Otherwise jumper to V
SS
.
The 82801E C-ICH
’s TP[3] must be routed to a test point with an option to jumper to V
SS
.
This test point is used for NAND tree testing. Otherwise jumper to V
SS
.
3.3.3
External RTC Circuitry
To reduce RTC well power consumption, the 82801E C-ICH implements an internal oscillator
circuit that is sensitive to step voltage changes in VccRTC and VBIAS. Figure 7 shows a schematic
diagram of the circuitry required to condition these voltages to ensure correct operation of the
82801E C-ICH RTC.
8
All “Z”
9–24
Reserved. DO NOT ATTEMPT
>24
No Test Mode Selected
Table 28. Test Mode Selection
Number of PCI Clocks RTCRST# driven low after PWROK active
Test Mode
Figure 7. Required External RTC Circuit
C3
12.5 pF
3.3V
VCCSUS
1 k
Vbatt
1 k
C1
0.047 uF
32768 Hz
Xtal
R1
10 M
R2
10 M
C2
12.5 pF
1
μ
F
VCCRTC
RTCX2
RTCX1
VBIAS
VSSRTC
Note: Capacitor C2 and C3 values are crystal-dependent.
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