參數(shù)資料
型號(hào)： HYB18T256324F-22
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit GDDR3 DRAM [600MHz]
中文描述： 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁(yè)數(shù)： 63/80頁(yè)
文件大?。?/td> 2026K
代理商： HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Functional Description
Data Sheet
63
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
3.12.2
Self-Refresh Exit (SREFEX)
Figure 49
Self Refresh Exit Command
To exit the Self Refresh Mode, a stable external clock
is needed before setting CKE high asynchronously.
Once the Self-Refresh Exit command is registered, a
delay equal or longer than tXSC (minimum 200 Clock
Cycles) must be satisfied before any command can be
applied. During this time, the DLL is automatically
enabled, reset and calibrated.
CKE must remain HIGH for the entire Self-Refresh exit
period and commands must be gated off with CS held
HIGH. Alternately, NOP commands may be registered
on each positive clock edge during the Self Refresh exit
interval.
Figure 50
Self Refresh Exit
#,+
#,+
2!3
#+%
#!3
7%
! !
$O NgT #A RE
! !
#3
Table 29
Parameter
Self Refresh Exit Timing Parameter for –1.6, –2.0 and –2.2 speed sorts
Symbol
Limit Values
–2.0
min
200
Units
Notes
–1.6
–2.2
min
200
max
–
max
–
min
200
max
–
Self Refresh Exit time
t
XSC
t
CK
#,+
#,+
$ONgT #ARE
. $
T
83#
#OMMAND
#+%
!#
!#
. $ ./0 OR $%3%, #OMMAND
!NY #OMMAND
. $
.
$
#,+ #,+ MUST
BE STABLE
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