參數(shù)資料
型號： HYB18T256324F-22
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit GDDR3 DRAM [600MHz]
中文描述： 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁數(shù)： 69/80頁
文件大?。?/td> 2026K
代理商： HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
Data Sheet
69
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
4.7
Driver current characteristics
4.7.1
Figure 54
represents the driver Pull-Down and Pull-Up IV characteristics under process, voltage and temperature
best and worst case conditions. The actual Driver Pull-Down and Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240
,
setting the nominal driver output impedance to
40
.
Driver IV characteristics at 40 Ohms
Figure 54
40 Ohm Driver Pull-Down and Pull-Up characteristics
Table 37
lists the numerical values of the minimum and maximum allowed values of the output driver Pull-Down
and Pull-Up IV characteristics.
Table 37
Voltage (V)
Programmed Driver IV Characteristics at 40 Ohm
Pull-Down Current (mA)
Minimum
2.32
4.56
6.69
8.74
10.70
12.56
14.34
16.01
17.61
19.11
20.53
21.92
23.29
24.65
26.00
27.35
28.70
-
-
Pull-Up Current (mA)
Minimum
-2.44
-4.79
-7.03
-9.18
-11.23
-13.17
-15.01
-16.74
-18.37
-19.90
.21.34
-22.72
-24.07
-25.40
-26.73
-28.06
-29.37
-
-
Maximum
3.04
5.98
8.82
11.56
14.19
16.72
19.14
21.44
23.61
26.10
28.45
30.45
32.73
34.95
37.10
39.15
41.01
42.53
43.71
Maximum
-3.27
-6.42
-9.45
-12.37
-15.17
-17.83
-20.37
-22.78
-25.04
-27.17
-29.17
-31.25
-33.00
-35.00
-37.00
-39.14
-41.25
-43.29
-45.23
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0ULL $OWN #HARACTERSTICS
6OUT 6
)
0ULL 5P #HARACTERSTICS
6$$1
6OUT 6
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