參數(shù)資料
型號(hào): HYB18T256324F-22
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit GDDR3 DRAM [600MHz]
中文描述: 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁(yè)數(shù): 65/80頁(yè)
文件大?。?/td> 2026K
代理商: HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
Data Sheet
65
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
4
Electrical Characteristics
4.1
Absolute Maximum Ratings
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of the
device. This is a stress rating only, and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Table 31
Parameter
Absolute Maximum Ratings
Symbol
Rating
min.
-0.5
-0.5
-0.5
-0.5
-55
Unit
max.
2.5
2.5
V
DDQ
+0.5
V
DDQ
+0.5
+150
50
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Storage Temperature
Short Circuit Output Current
V
DD
V
DDQ
V
IN
V
OUT
T
STG
I
OUT
V
V
V
V
°
C
mA
Table 32
Parameter
Operation Conditions
Symbol
Range
min.
0
0
Unit
max.
+90
+85
3.2
Operation Temperature (Junction)
Operation Temperature (Case)
Power Dissipation
T
J
T
C
P
D
°
C
°
C
W
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