參數(shù)資料
型號(hào): HYB18T256324F-22
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit GDDR3 DRAM [600MHz]
中文描述: 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁(yè)數(shù): 72/80頁(yè)
文件大小: 2026K
代理商: HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
Data Sheet
72
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
4.10
Termination IV Characteristic at 240 Ohms
Figure 57
represents the ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature
best and worst case conditions. The actual ADD/CMD termination Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240
,
setting the nominal termination impedance to
240
. (CKE = 1at the RES transition during Power-Up for ADD/CMD terminations).
Figure 57
240 Ohm Active Termination Characteristic
Table 40
lists the numerical values of the minimum and maximum allowed values of the ADD/CMD termination IV
characteristic.
Table 40
Voltage (V)
Programmed Terminator Characterisitc at 240 Ohm
Terminator Pull-Up Current
(mA)
Minimum
Maximum
Voltage (V)
Terminator Pull-Up Current
(mA)
Minimum
-3.32
-3.56
-3.79
-4.01
-4.23
-4.46
-4.68
-4.90
-
-
Maximum
-4.53
-4.86
-5.21
-5.50
-5.83
-6.17
-6.52
-6.88
-7.21
-7.54
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-0.41
-0.80
-1.17
-1.53
-1.87
-2.20
-2.50
-2.79
-3.06
-0.55
-1.07
-1.58
-2.06
-2.53
-2.97
-3.40
-3.80
-4.17
/HM 4ERMINATION #HARACTERSTICS
6$$1
6OUT 6
)
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