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參數(shù)資料
| 型號： | K4B4G0846B-MCF80 |
| 元件分類： | DRAM |
| 英文描述： | 512M X 8 DDR DRAM, 0.3 ns, PBGA78 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
| 文件頁數(shù)： | 14/59頁 |
| 文件大?。?/td> | 1079K |
| 代理商： | K4B4G0846B-MCF80 |
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Page 21 of 59
Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
9.7 34 ohm Output Driver DC Electrical Characteristics
A functional representation of the output buffer is shown below. Output driver impedance RON is defined by the value of external reference resistor RZQ
as follows:
RON34 = RZQ/7 (Nominal 34ohms +/- 10% with nominal RZQ=240ohm)
RON40 = RZQ/6 (Nominal 40ohms +/- 10% with nominal RZQ=240ohm)
The individual Pull-up and Pull-down resistors (RONpu and RONpd) are defined as follows
Output Driver : Definition of Voltages and Currents
Figure 11. Output Driver : Definition of Voltages and Currents
[ Table 22 ] Output Driver DC Electrical Characteristics, assuming RZQ=240 ohms ;
entire operating temperature range; after proper ZQ calibration
Note :
1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibra-
tion, see following section on voltage and temperature sensitivity
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS
3. Pull-down and pull-up output driver impedance are recommended to be calibrated at 0.5 X VDDQ. Other calibration schemes may be used to achieve the linearity spec shown
above, e.g. calibration at 0.2 X VDDQ and 0.8 X VDDQ
4. Measurement definition for mismatch between pull-up and pull-down, MMpupd: Measure RONpu and RONpd. both at 0.5 X VDDQ:
RONnom
Resistor
Vout
Min
Nom
Max
Units
Notes
34Ohms
RON34pd
VOLdc = 0.2 x VDDQ
0.6
1.0
1.1
RZQ/7
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
1,2,3
VOHdc = 0.8 x VDDQ
0.9
1.0
1.4
1,2,3
RON34pu
VOLdc = 0.2 x VDDQ
0.9
1.0
1.4
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
1,2,3
VOHdc = 0.8 x VDDQ
0.6
1.0
1.1
1,2,3
40Ohms
RON40pd
VOLdc = 0.2 x VDDQ
0.6
1.0
1.1
RZQ/6
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
1,2,3
VOHdc = 0.8 x VDDQ
0.9
1.0
1.4
1,2,3
RON40pu
VOLdc = 0.2 x VDDQ
0.9
1.0
1.4
1,2,3
VOMdc = 0.5 x VDDQ
0.9
1.0
1.1
1,2,3
VOHdc = 0.8 x VDDQ
0.6
1.0
1.1
1,2,3
Mismatch between Pull-up and Pull-down,
MMpupd
VOMdc = 0.5 x VDDQ
-10
10
%
1,2,4
RONpu =
VDDQ-VOUT
l Iout l
under the condition that RONpd is turned off
RONpd =
VOUT
l Iout l
under the condition that RONpu is turned off
VDDQ
DQ
VSSQ
RON
Pu
Ipd
RON
Pd
To
other
circuity
Output Driver
Ipu
Iout
Vout
MMpupd =
RONpu - RONpd
x 100
RONnom
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4B4G0846B-MCH9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDP 4Gb B-die DDR3 SDRAM Specification |
| K4B4G0846D-BCK0000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCH9000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCK000 | 制造商:Samsung Semiconductor 功能描述: |
| K4B4G1646B-HCK0000 | 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays |
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