參數(shù)資料
型號： K4B4G0846B-MCF80
元件分類： DRAM
英文描述： 512M X 8 DDR DRAM, 0.3 ns, PBGA78
封裝： HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
文件頁數(shù)： 24/59頁
文件大小： 1079K
代理商： K4B4G0846B-MCF80
Page 30 of 59
Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
[ Table 31 ] Basic IDD and IDDQ Measurement Conditions
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B
c) Pecharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
e) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
f) Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device
10.2 IDD Specifications definition
Editorial Instruction: Chapter 10.2 in JESD79-3B in principal stays at it is. See Reference Material at the end of this ballot.
Only the following changes will be done to Chapter 10.2:
Table 53 "IDD Specification Example 512M DDR3", add the following Rows:
- Between IDD2N and IDD2Q: Add 2 rows (one for x4/x8, one for x16) with a straddled cell for Symbol "IDD2NT".
- Between IDD2NT (as inserted with above bullet) and IDD2Q: Add 2 rows (one for x4/x8, one for x16) with a straddled cell for Symbol ’IDDQ2NT".
- Between IDD4R and IDD4W: Add 3 rows (one for x4, one for x8 and one for x16) with a straddled cell for Symbol "IDDQ4R".
Symbol
Description
IDD6ET
Self-Refresh Current: Extended Temperature Range (optional)f)
TCASE: 0 - 95°C; Auto Self-Refresh (ASR): Disabledd); Self-Refresh Temperature Range (SRT): Extendede); CKE: Low; External clock: Off; CK and CK:
LOW; CL: see Table 30 ; BL: 8a); AL: 0; CS, Command, Address, Bank Address, Data IO: MID-LEVEL;DM:stable at 0; Bank Activity: Extended Temperature
Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID-LEVEL
IDD6TC
Auto Self-Refresh Current (optional)f)
TCASE: 0 - 95°C; Auto Self-Refresh (ASR): Enabledd); Self-Refresh Temperature Range (SRT): Normale); CKE: Low; External clock: Off; CK and CK:
LOW; CL: see Table 30 ; BL: 8a); AL: 0; CS, Command, Address, Bank Address, Data IO: MID-LEVEL; DM:stable at 0; Bank Activity: Auto
Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID-LEVEL
IDD7
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 30 ; BL: 8a, g); AL: CL-1; CS: High between ACT and RDA; Command,
Address, Bank Address Inputs: partially toggling according to Table 39 ; Data IO: read data bursts with different data between one burst and the next one
according to Table 39 ; DM:stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing, see Table 39 ; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 39
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4B4G0846B-MCH9 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDP 4Gb B-die DDR3 SDRAM Specification
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K4B4G1646B-HCH9000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCK000 制造商:Samsung Semiconductor 功能描述:
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