參數(shù)資料
型號: K4B4G0846B-MCF80
元件分類: DRAM
英文描述: 512M X 8 DDR DRAM, 0.3 ns, PBGA78
封裝: HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
文件頁數(shù): 7/59頁
文件大?。?/td> 1079K
代理商: K4B4G0846B-MCF80
Page 15 of 59
Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
8.3 AC and DC Logic Input Levels for Ditterential Signals
8.3.1 Differential signal definition
Figure 2 : Definition of differential ac-swing and "time above ac level" tDVAC
8.3.2 Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)
[ Table 9 ] Defferential AC and DC Input Levels
Notes:
1. Used to define a differential signal slew-rate.
2. for CK - CK use VIH/VIL(AC) of ADD/CMD and VREFCA; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(AC) of DQs and VREFDQ; if a
reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective
limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Reter to "overshoot and Undersheet
Specification "
[ Table 10 ] Allowed time before ringback (tDVAC) for CLK - CLK and DQS - DQS
Symbol
Parameter
DDR3-800/1066/1333/1600
unit
Note
min
max
VIHdiff
differential input high
+0.2
note 3
V
1
VILdiff
differential input low
note 3
-0.2
V
1
VIHdiff(AC)
differential input high ac
2 x (VIH(AC)-VREF)
note 3
V
2
VILdiff(AC)
differential input low ac
note 3
2 x (VREF - VIL(AC))
V2
Slew Rate [V/ns]
tDVAC [ps] @ |VIH/Ldiff(AC)| = 350mV
tDVAC [ps] @ |VIH/Ldiff(AC)| = 300mV
min
max
min
max
> 4.0
75
-
175
-
4.0
57
-
170
-
3.0
50
-
167
-
2.0
38
-
163
-
1.8
34
-
162
-
1.6
29
-
161
-
1.4
22
-
159
-
1.2
13
-
155
-
1.0
0
-
150
-
< 1.0
0
-
150
-
0.0
tDVAC
VIH.DIFF.MIN
half cycle
Dif
feren
tia
lIn
put
V
o
lta
ge
(i
.e.
DQS-DQS
,CK-CK
)
time
tDVAC
VIH.DIFF.AC.MIN
VIL.DIFF.MAX
VIL.DIFF.AC.MAX
相關(guān)PDF資料
PDF描述
K4E640411D-TC500 16M X 4 EDO DRAM, 50 ns, PDSO32
K4F640411C-TC500 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
K4F640412C-JC450 16M X 4 FAST PAGE DRAM, 45 ns, PDSO32
K4T1G044QC-ZCLE6 256M X 4 DDR DRAM, 0.45 ns, PBGA60
K4T56163QI-ZLD50 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4B4G0846B-MCH9 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDP 4Gb B-die DDR3 SDRAM Specification
K4B4G0846D-BCK0000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCH9000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCK000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCK0000 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays