參數(shù)資料
型號(hào): K4B4G0846B-MCF80
元件分類: DRAM
英文描述: 512M X 8 DDR DRAM, 0.3 ns, PBGA78
封裝: HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
文件頁數(shù): 53/59頁
文件大小: 1079K
代理商: K4B4G0846B-MCF80
Page 57 of 59
Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
Figure 26 - Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock).
VSS
CK
Hold Slew Rate
Falling Signal
Rising Signal
Delta TR
Delta TF
VREF(DC) - VIL(DC)max
Delta TR
=
VIH(DC)min - VREF(DC)
Delta TF
=
VDDQ
VIH(AC) min
VIH(DC) min
VREF(DC)
VIL(DC) max
VIL(AC) max
nominal
slew rate
nominal
slew rate
dc to VREF
region
dc to VREF
region
tIS
tIH
tIS
tIH
dc to VREF
region
Note :Clock and Strobe are drawn on a different time scale.
tDS
tDH
tDS
tDH
DQS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4B4G0846B-MCH9 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDP 4Gb B-die DDR3 SDRAM Specification
K4B4G0846D-BCK0000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCH9000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCK000 制造商:Samsung Semiconductor 功能描述:
K4B4G1646B-HCK0000 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays