參數(shù)資料
型號(hào): LPC3250FET296,551
廠商: NXP Semiconductors
文件頁數(shù): 48/57頁
文件大小: 0K
描述: IC ARM9 MCU 256K 296-TFBGA
特色產(chǎn)品: LPC32x0 ARM926EJ-S Processor
標(biāo)準(zhǔn)包裝: 126
系列: LPC3200
核心處理器: ARM9
芯體尺寸: 16/32-位
速度: 266MHz
連通性: EBI/EMI,以太網(wǎng),I²C,IrDA,Microwire,SPI,SSI,SSP,UART/USART,USB OTG
外圍設(shè)備: DMA,I²S,LCD,電機(jī)控制 PWM,PWM,WDT
輸入/輸出數(shù): 51
程序存儲(chǔ)器類型: ROMless
RAM 容量: 256K x 8
電壓 - 電源 (Vcc/Vdd): 0.9 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 3x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 296-TFBGA
包裝: 托盤
配用: 568-4743-ND - KIT LCD TOUCH 5.7" FOR LPC3250
568-4742-ND - MODULE DIMM LPC2478 ARM7
622-1030-ND - KIT LCD TOUCH 5.7" FOR LPC3250
其它名稱: 568-4533
935287084551
LPC3220_30_40_50
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 October 2011
52 of 79
NXP Semiconductors
LPC3220/30/40/50
16/32-bit ARM microcontrollers
[1]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply voltages.
[2]
Applies to VDD_CORE pins.
[3]
Applies to pins VDD_RTC, VDD_RTCCORE, and VDD_RTCOSC.
[4]
Applies to pins VDD_COREFXD, VDD_OSC, VDD_PLL397, VDD_PLLHCLK, and VDD_PLLUSB.
[5]
Applies when using 1.8 V Mobile DDR or Mobile SDR SDRAM.
[6]
Applies when using 2.5 V DDR memory.
[7]
Applies when using 3.3 V SDR SDRAM and SRAM.
[8]
Specifies current on combined VDD_RTCx during normal chip operation: VDD_RTC, VDD_CORE, VDD_OSC = 1.2 V and
VDD_CORE, VDD_IOx at typical voltage.
[9]
Specifies current on combined VDD_RTCx during backup operation: VDD_RTC, VDD_CORE, VDD_OSC = 1.2 V and all other VDD_x
at 0 V.
[10] Referenced to the applicable VDD for the pin.
[11] Including voltage on outputs in 3-state mode.
[12] The applicable VDD voltage for the pin must be present.
[13] 3-state outputs go into 3-state mode when the applicable VDD voltage for the pin is grounded.
[14] Accounts for 100 mV voltage drop in all supply lines.
[15] Allowed as long as the current limit does not exceed the maximum current allowed by the device.
IIH
HIGH-level input current VI = VDD; no pull-down
1
A
IOZ
OFF-state output current VO = 0 V; VO =VDD;
no pull-up/down
1
A
Ilatch
I/O latch-up current
(1.5V
DD) < VI < (1.5VDD)
100
mA
Table 8.
Static characteristics …continued
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
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