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參數(shù)資料
| 型號： | pentium III |
| 廠商： | Intel Corp. |
| 英文描述： | pentium III Processor for the PGA370 Socket at 500MHz to 933MHz(工作頻率500到933兆赫茲活動帶PGA370插孔奔III處理器) |
| 中文描述： | 奔騰III處理器在500MHz到933MHz的（工作頻率500到933兆赫茲活動帶PGA370插孔奔三處理器的PGA370插座） |
| 文件頁數(shù)： | 46/78頁 |
| 文件大?。?/td> | 610K |
| 代理商： | PENTIUM III |
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46
Datasheet
Pentium
III Processor for the PGA370 Socket at 500 MHz to 933 MHz
5. Power density is the maximum power the processor die can dissipate (i.e., processor power) divided by the
die area over which the power is generated. Power for these processors is generated from the core area
shown in
Figure 18
.
6. T
JUNCTION
offset values do not include any thermal diode kit measurement error. Diode kit measurement
error must be added to the T
JUNCTION
offset value from the table, as outlined in the Intel
Pentium
III
processor Thermal Metrology for CPUID-068h Family Processors(Order Number: 245301). Intel has
characterized the use of the Analog Devices AD1021 diode measurement kit and found its measurement
error to be 1 °C.
Figure 18
is a block diagram of the Pentium
III
processor die layout. The layout differentiates the
processor core from the cache die area. In effect, the thermal design power indentified in
Table 24
is dissipated entirely from the processor core area. Thermal solution designs should compensate
for this smaller heat flux area and not assume that the power is uniformly distributed across the
entire die area.
4.1.1
Thermal Diode
The Pentium
III
processor for the PGA370 socket incorporates an on-die diode that may be used to
monitor the die temperature (junction temperature). A thermal sensor located on the motherboard,
or a stand-alone measurement kit, may monitor the die temperature of the processor for thermal
management or instrumentation purposes.
Table 25
and
Table 26
provide the diode parameter and
interface specifications.
Note:
The reading of the thermal sensor connected to the thermal diode will not necessarily reflect the
temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor, on-
die temperature gradients between the location of the thermal diode and the hottest location on the
die at a given point in time, and time based variations in the die temperature measurement. Time
based variations can occur when the sampling rate of the thermal diode (by the thermal sensor) is
slower than the rate at which the T
junction
temperature can change.
Figure 18. Processor Functional Die Layout
Die Area (1.046 cm
2
)
Core Area (0.726 cm
2
)
Cache Area (0.320 cm
2
)
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