- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371434 > 28F001BX (Intel Corp.) 5 V Boot Block Flash Memory(5 V引導塊閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F001BX |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Boot Block Flash Memory(5 V引導塊閃速存儲器) |
| 中文描述： | 5伏啟動塊閃存（5伏引導塊閃速存儲器） |
| 文件頁數(shù)： | 10/39頁 |
| 文件大?。?/td> | 648K |
| 代理商： | 28F001BX |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
28F001BX
E
10
29040605
Figure 4. 28F001BX-T in a 80C188 System
2.0 PRINCIPLES OF OPERATION
The 28F001BX introduces on-chip write automation
to manage write and erase functions. The write
state machine allows for 100% TTL-level control
inputs, fixed power supplies during erasure and
programming, minimal processor overhead with
RAM-like write timings, and maximum EPROM
compatiblity.
After initial device power-up, or after return from
deep power-down mode (see Bus Operation), the
28F001BX functions as a read-only memory.
Manipulation of external memory-control pins yield
standard EPROM read, standby, output disable or
intelligent identifier operations. Both status register
and intelligent identifiers can be accessed through
the command register when V
PP
= V
PPL
.
29040606
Figure 5. 28F001BX-B in a 80C51 System
This same subset of operations is also available
when high voltage is applied to the V
PP
pin. In
addition, high voltage on V
PP
enables successful
erasure and programming of the device. All
functions
associated
contents
—program, erase, status, and inteligent
identifier—are accessed via the command register
and verified through the status register.
with
altering
memory
Commands
microprocessor write timings. Register contents
serve as input to the WSM, which controls the
erase and programming circuitry. Write cycles also
internally latch addresses and data needed for
programming or erase operations. With the
appropriate command written to the register,
standard microprocessor read timings output array
data, access the intelligent identifier codes, or
output program and erase status for verification.
are
written
using
standard
相關PDF資料 |
PDF描述 |
|---|---|
| 28F002BC | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 28F002BV-B | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004B3 | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導塊閃速存儲器) |
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
| 28F002BC | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。