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參數(shù)資料
| 型號： | 28F001BX |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Boot Block Flash Memory(5 V引導塊閃速存儲器) |
| 中文描述： | 5伏啟動塊閃存（5伏引導塊閃速存儲器） |
| 文件頁數(shù)： | 26/39頁 |
| 文件大?。?/td> | 648K |
| 代理商： | 28F001BX |
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28F001BX
E
26
10.4
DC Characteristics
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Prog/Erase Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
2.5
V
V
HH
RP#, OE# Unlock Voltage
11.4
12.6
V
Boot Block Prog/Erase
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 12.0 V, T
A
= 25
°C. These currents
are valid for all product versions (packages and speeds).
I
is specified with the device deselected. If the 28F001BX is read while in erase suspend mode, current draw is the
sum of I
CCES
and I
CCR
.
Erase/programs are inhibited when V
PP
= V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
2.
3.
10.4
V
CC
= 5.0
V ±10%, T
A
= –40 °C to +85 °C
DC Characteristics
(Continued)
Symbol
Parameter
Notes Min
Typ
Max
Unit
Test Conditions
I
IL
Input Load Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
I
CCS
V
CC
Standby Current
1.2
2.0
mA
V
CC
= V
CC
Max
CE# = RP# = V
IH
30
150
μA
V
CC
= V
CC
Max
CE# = RP# = V
CC
±0.2 V
I
CCD
V
CC
Deep Power-Down Current
1
0.05
2.0
μA
RP# = GND ±0.2 V
I
CCR
V
CC
Read Current
1
13
35
mA
V
CC
= V
CC
Max, CE# = V
IL
f = 8 MHz, I
OUT
= 0 mA
I
CCP
V
CC
Programming Current
1
5
20
mA
Programming in Progress
I
CCE
V
CC
Erase Current
1
6
20
mA
Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA
Erase Suspended
CE# = V
IH
I
PPS
V
PP
Standby Current
1
±1
±15
μA
V
PP
≤
V
CC
90
400
μA
V
PP
> V
CC
I
PPD
V
PP
Deep Power-Down Current
1
0.80
1.0
μA
RP# = GND ±0.2 V
I
PPP
V
PP
Programming Current
1
6
30
μA
V
PP
= V
PP
Programming in Progress
相關PDF資料 |
PDF描述 |
|---|---|
| 28F002BC | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 28F002BV-B | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004B3 | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級引導塊閃速存儲器) |
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
| 28F002BC | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
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