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參數(shù)資料
| 型號(hào)： | 28F001BX |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Boot Block Flash Memory(5 V引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 5伏啟動(dòng)塊閃存（5伏引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 7/39頁 |
| 文件大小： | 648K |
| 代理商： | 28F001BX |
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E
28F001BX
7
Table 1. Lead Descriptions
Symbol
Type
Name and Function
A0
–A16
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally latched
during a write cycle.
DQ0–DQ7
INPUT/
OUTPUT
DATA INPUTS/OUTPUTS:
Inputs data and commands during memory write
cycles; outputs data during memory, status register and identifier read cycles.
The data pins are active high and float to tri-state off when the chip is deselected
or the outputs are disabled. Data is internally latched during a write cycle.
CE#
INPUT
CHIP ENABLE:
Activates the device’s control logic, input buffers, decoders and
sense amplifiers. CE# is active low; CE# high deselects the memory device and
reduces power consumption to standby levels.
RP#
INPUT
POWERDOWN:
Puts the device in deep power-down mode. RP# is active low;
RP# high gates normal operation. RP# = V
HH
allows programming of the boot
block. RP# also locks out erase or write operations when active low, providing
data protection during power transitions. RP# active resets internal automation.
Exit from deep power-down sets device to read array mode.
OE#
INPUT
OUTPUT ENABLE:
Gates the device’s outputs through the data buffers during a
read cycle. OE# is active low. OE# = V
HH
(pulsed) allows programming of the
boot block.
WE#
INPUT
WRITE ENABLE:
Controls writes to the command register and array blocks.
WE# is active low. Addresses and data are latched on the rising edge of the
WE# pulse.
V
PP
ERASE/PROGRAM POWER SUPPLY
for erasing blocks of the array or
programming bytes of each block. Note: With V
PP
< V
PPL
max, memory contents
cannot be altered.
V
CC
DEVICE POWER SUPPLY:
(5 V ±10%)
GND
GROUND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F002BC | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 28F002BV-B | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004B3 | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
| 28F002BC | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
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