參數(shù)資料
型號(hào): 28F001BX
廠商: Intel Corp.
英文描述: 5 V Boot Block Flash Memory(5 V引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 5伏啟動(dòng)塊閃存(5伏引導(dǎo)塊閃速存儲(chǔ)器)
文件頁(yè)數(shù): 27/39頁(yè)
文件大?。?/td> 648K
代理商: 28F001BX
E
10.4
28F001BX
27
DC Characteristics
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
PPE
V
PP
Erase Current
1
6
30
mA
V
PP
= V
PPH
Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
90
400
μA
V
PP
= V
PPH
Erase Suspended
I
ID
A
9
Intelligent Identifier Current
1
90
500
μA
A
9
= V
ID
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
OH1
Output High Voltage (TTL)
2.4
V
V
CC
= V
CC
Min
I
OH
= 2.5 mA
V
OH2
Output High Voltage (CMOS)
0.85
V
CC
V
V
CC
= V
CC
Min
I
OH
= –2.5 μA
V
CC
–0.4
V
CC
= V
CC
Min
I
OH
= –100 μA
V
ID
A
9
Intelligent Identifier Voltage
11.5
13.0
V
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Prog/Erase
Operations
11.4 12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
2.5
V
V
HH
RP#, OE# Unlock Voltage
11.4
12.6
V
Boot Block Prog/Erase
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 12.0 V, T
A
= 25
°C. These currents
are valid for all product versions (packages and speeds).
I
is specified with the device deselected. If the 28F001BX is read while in erase suspend mode, current draw is the
sum of I
CCES
and I
CCR
.
Erase/programs are inhibited when V
PP
= V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
2.
3.
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