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參數(shù)資料
| 型號(hào)： | 28F001BX |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Boot Block Flash Memory(5 V引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 5伏啟動(dòng)塊閃存（5伏引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 32/39頁(yè) |
| 文件大?。?/td> | 648K |
| 代理商： | 28F001BX |
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28F001BX
E
32
NOTES:
1.
Read timing characteristics during erase and program operations are the same as during read-only operations. Refer to
Section 10.5, AC Characteristics
—Read-Only Operations
.
Sampled, not 100% tested.
Refer to Table 3 for valid A
IN
for byte programming or block erasure.
Refer to Table 3 for valid D
IN
for byte programming or block erasure.
The on-chip WSM incorporates all program and erase system functions and overhead of standard Intel Flash memory,
including byte program and verify (programming) and block precondition, precondition verify, erase and erase verify
(erasing).
Program and erase durations are measured to completion (SR.7 = 1). V
PP
should be held at V
PPH
until determination of
program/erase success (SR.3/4/5 = 0).
For boot block programming and erasure, RP# should be held at V
HH
until determination of program/erase success
(SR.3/4/5 = 0).
Alternate boot block access method.
See
Standard Test Configuration
.
2.
3.
4.
5.
6.
7.
8.
9.
10.6.1
PROM PROGRAMMER SPECIFICATIONS
Versions
V
CC
±10%
–120
–150
Symbol
Parameter
Notes
Min
Max
Min
Max
Unit
t
GHHWL
OE# V
HH
Setup to WE# Going Low
1, 2
480
480
ns
t
WHGH
t
PHH
OE# V
HH
Hold from WE# High
1, 2
480
480
ns
NOTES:
1.
2.
Sampled, not 100% tested.
Alternate boot block access method.
10.7
Erase and Programming Performance
–120
–150
Parameter
Notes
Min
Typ
(1)
Max
Min
Typ
(1)
Max
Unit
Boot Block Erase Time
2
2.10
14.9
2.10
14.9
Sec
Boot Block Program Time
2
0.15
0.52
0.15
0.52
Sec
Parameter Block Erase Time
2
2.10
14.6
2.10
14.6
Sec
Parameter Block Program Time
2
0.07
0.26
0.07
0.26
Sec
Main Block Erase Time
2
3.80
20.9
3.80<
20.9
Sec
Main Block Program Time
2
2.10
7.34
2.10
7.34
Sec
Chip Erase Time
2
10.10
65
10.10
65
Sec
Chip Program Time
2
2.39
8.38
2.39
8.38
Sec
NOTES:
1.
2.
25 °C, 12.0 V
PP
.
Excludes System-Level Overhead.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F002BC | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 28F002BV-B | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F004B3 | 3 Volt Advanced Boot Block Flash Memory(3 V,4M位高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F004S3 | BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 28F004S5 | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
| 28F002BC | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
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