參數(shù)資料
型號: 28F001BX
廠商: Intel Corp.
英文描述: 5 V Boot Block Flash Memory(5 V引導(dǎo)塊閃速存儲器)
中文描述: 5伏啟動塊閃存(5伏引導(dǎo)塊閃速存儲器)
文件頁數(shù): 36/39頁
文件大小: 648K
代理商: 28F001BX
28F001BX
E
36
10.8
AC Characteristics
—CE#-Controlled Write Operations
(1)
Versions
V
CC
±10%
–120
–150
Symbol
Parameter
Notes
Min
Max
Min
Max
Unit
t
AVAV
t
WC
Write Cycle Time
120
150
ns
t
PHEL
t
PS
RP# High Recovery to CE# Going
Low
2
480
480
ns
t
WLEL
t
WS
WE# Setup to CE# Going Low
0
0
ns
t
ELEH
t
CP
CE# Pulse Width
70
70
ns
t
PHHEH
t
PHS
RP# V
HH
Setup to CE# Going High
2
100
100
ns
t
VPEH
t
VPS
V
PP
Setup to CE# Going High
2
100
100
ns
t
AVEH
t
AS
Address Setup to CE# Going High
3
50
50
ns
t
DVEH
t
DS
Data Setup to CE# Going High
4
50
50
ns
t
EHDX
t
DH
Data Hold from CE# High
10
10
ns
t
EHAX
t
AH
Address Hold from CE# High
15
15
ns
t
EHWH
t
WH
WE# Hold from CE# High
0
0
ns
t
EHEL
t
EPH
CE# Pulse Width High
25
25
ns
t
EHQV1
Duration of Programming Operation
5, 6
15
15
μs
t
EHQV2
Duration of Erase Operation (Boot)
5, 6
1.3
1.3
sec
t
EHQV3
Duration of Erase Operation
(Parameter)
5, 6
1.3
1.3
sec
t
EHQV4
Duration of Erase Operation (Main)
5, 6
3.0
3.0
sec
t
EHGL
Write Recovery before Read
0
0
μs
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
2, 5
0
0
ns
t
QVPH
t
PHH
RP# V
HH
Hold from Valid SRD
2, 6
0
0
ns
t
PHBR
Boot-Block Relock Delay
2
100
100
ns
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