參數(shù)資料
型號(hào): 28F001BX
廠商: Intel Corp.
英文描述: 5 V Boot Block Flash Memory(5 V引導(dǎo)塊閃速存儲(chǔ)器)
中文描述: 5伏啟動(dòng)塊閃存(5伏引導(dǎo)塊閃速存儲(chǔ)器)
文件頁(yè)數(shù): 31/39頁(yè)
文件大?。?/td> 648K
代理商: 28F001BX
E
10.6
28F001BX
31
AC Characteristics
—Write/Erase/Program Operations
(1, 9)
Versions
V
CC
±10%
(10)
–120
–150
Symbol
Parameter
Notes
Min
Max
Min
Max
Unit
t
AVAV
t
WC
Write Cycle Time
120
150
ns
t
PHWL
t
PS
RP# High Recovery to WE# Going Low
2
480
480
ns
t
ELWL
t
CS
CE# Setup to WE# Going Low
10
10
ns
t
WLWH
t
WP
WE# Pulse Width
50
50
ns
t
PHHWH
t
PHS
RP# V
HH
Setup to WE# Going High
2
100
100
ns
t
VPWH
t
VPS
V
PP
Setup to WE# Going High
2
100
100
ns
t
AVWH
t
AS
Address Setup to WE# Going High
3
50
50
ns
t
DVWH
t
DS
Data Setup to WE# Going High
4
50
50<
ns
t
WHDX
t
DH
Data Hold from WE# High
10
10
ns
t
WHAX
t
AH
Address Hold from WE# High
10
10
ns
t
WHEH
t
CH
CE# Hold from WE# High
10
10
ns
t
WHWL
t
WPH
WE# Pulse Width High
50
50
ns
t
WHQV1
Duration of Programming Operation
5, 6, 7
15
15
μs
t
WHQV2
Duration of Erase Operation (Boot)
5, 6, 7
1.3
1.3
sec
t
WHQV3
Duration of Erase Operation
(Parameter)
5, 6, 7
1.3
1.3
sec
t
WHQV4
Duration of Erase Operation (Main)
5, 6, 7
3.0
3.0
sec
t
WHGL
Write Recovery before Read
0
0
μs
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
2, 6
0
0
ns
t
QVPH
t
PHH
RP# V
HH
Hold from Valid SRD
2, 7
0
0
ns
t
PHBR
Boot-Block Relock Delay
2
100
100
ns
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