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參數(shù)資料
| 型號(hào)： | 28F016SC |
| 廠商： | Intel Corp. |
| 英文描述： | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲(chǔ)器) |
| 中文描述： | 16兆內(nèi)存SmartVoltage FlashFile（1,600位智能電壓閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 12/42頁(yè) |
| 文件大?。?/td> | 725K |
| 代理商： | 28F016SC |
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BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
12
PRELIMINARY
2.0
PRINCIPLES OF OPERATION
The byte-wide SmartVoltage FlashFile memories
include an on-chip WSM to manage block erase,
program, and lock-bit configuration functions. It
allows for: 100% TTL-level control inputs, fixed
power supplies during block erasure, program, and
lock-bit configuration, and minimal processor
overhead with RAM-like interface timings.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the
device defaults to read array mode. Manipulation of
external memory control pins allow array read,
standby, and output disable operations.
Status register and identifier codes can be
accessed through the CUI independent of the V
PP
voltage. High voltage on V
PP
enables successful
block erasure, program, and lock-bit configuration.
All functions associated with altering memory
contents
—block
erase,
configuration, status, and identifier codes—are
accessed via the CUI and verified through the
status register.
program,
lock-bit
Commands are written using standard micro-
processor write timings. The CUI contents serve as
input to the WSM that controls block erase,
program, and lock-bit configuration operations. The
internal algorithms are regulated by the WSM,
including pulse repetition, internal verification, and
margining of data. Addresses and data are
internally latched during write cycles. Writing the
appropriate command outputs array data, accesses
the identifier codes, or outputs status register data.
Interface software that initiates and polls progress
of block erase, program, and lock-bit configuration
can be stored in any block. This code is copied to
and executed from system RAM during flash
memory updates. After successful completion,
reads are again possible via the Read Array
command. Block erase suspend allows system
software to suspend a block erase to read or write
data from any other block. Program suspend allows
system software to suspend a program to read data
from any other flash memory array location.
64-Kbyte Block
1FFFFF
31
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
30
29
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27
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
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17FFFF
26
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170000
16FFFF
160000
15FFFF
150000
14FFFF
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13FFFF
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19
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
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0F0000
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11
0B0000
0AFFFF
0A0000
09FFFF
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080000
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7
070000
06FFFF
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02FFFF
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010000
00FFFF
000000
2
1
0
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8-Mbit
16-Mbit
4-Mbit
Figure 5. Memory Map
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F008S | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器) |
| 28F0101024K | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010 | 1024K (128K x 8) CMOS FLASH MEMORY |
| 28F016B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F032B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
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