參數(shù)資料
型號: 28F016SC
廠商: Intel Corp.
英文描述: 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器)
中文描述: 16兆內存SmartVoltage FlashFile(1,600位智能電壓閃速存儲器)
文件頁數(shù): 30/42頁
文件大小: 725K
代理商: 28F016SC
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
30
PRELIMINARY
6.0
ELECTRICAL SPECIFICATIONS
6.1
Absolute Maximum Ratings*
Temperature under Bias................
–10°C to +80°C
Storage Temperature....................–65°C to +125°C
Voltage on Any Pin
(except V
PP,
and RP#)......... –2.0 V to +7.0 V
(1)
V
PP
Voltage ........................... –2.0 V to +14.0 V
(1,2)
RP# Voltage ........................–2.0 V to +14.0 V
(1,2,4)
Output Short Circuit Current ....................100 mA
(3)
NOTICE: This datasheet contains information on new
products in production. Do not finalize a design with this
information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design.
*WARNING: Stressing the device beyond the
“Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability.
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is
–0.5 V on input/output pins and –0.2 V on V
CC
, RP#,
and V
PP
pins. During transitions, this level may undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on
input/output pins and V
CC
is V
CC
+0.5 V which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
and RP# may overshoot to +14.0 V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. RP# voltage is normally at V
IL
or V
IH
. Connection to supply of V
HH
is allowed for a maximum cumulative period of 80 hours.
6.2
Commercial Temperature Operating Conditions
Commercial Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
T
A
Operating Temperature
0
+70
°C
Ambient Temperature
V
CC1
V
CC
Supply Voltage (2.7 V–3.6 V)
1
2.7
3.6
V
V
CC2
V
CC
Supply Voltage (3.3 V ± 0.3 V)
3.0
3.6
V
V
CC3
V
CC
Supply Voltage (5 V ± 5%)
4.75
5.25
V
V
CC4
V
CC
Supply Voltage (5 V ± 10%)
4.5
5.5
V
NOTE:
1.
Block erase, program, and lock-bit configuration with V
CC
<
3.0 V should not be attempted.
6.3
T
A
= +25°C, f = 1 MHz
Capacitance
(1)
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
= 0.0 V
C
OUT
Output Capacitance
8
12
pF
V
OUT
= 0.0 V
NOTE:
1.
Sampled, not 100% tested.
相關PDF資料
PDF描述
28F008S 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲器)
28F0101024K 28F010 1024K (128K X 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY
28F016B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關代理商/技術參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY