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參數(shù)資料
| 型號(hào)： | 28F016SC |
| 廠商： | Intel Corp. |
| 英文描述： | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲(chǔ)器) |
| 中文描述： | 16兆內(nèi)存SmartVoltage FlashFile（1,600位智能電壓閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 22/42頁 |
| 文件大?。?/td> | 725K |
| 代理商： | 28F016SC |
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BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
22
PRELIMINARY
SR.7 =
0
1
Start
Write 20H,
Block Address
Write D0H,
Block Address
Full Status
Check if Desired
Block Erase
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read Status
Register
Suspend
Block Erase
Suspend Block
Erase Loop
Yes
No
1
0
Command Sequence
Error
SR.3 =
SR.5 =
SR.4,5 =
Block Erase
Error
Bus
Operation
Command
Comments
Standby
Check SR.4,5
Both 1 = Command Sequence Error
Standby
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple blocks are erased
before full status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Check SR.5
1 = Block Erase Error
Standby
Bus
Operation
Command
Comments
Write
Write
Erase Setup
Read
Data = 20H
Addr = Within Block to Be Erased
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent block erasures.
Full status check can be done after each block erase, or after a
sequence of block erasures.
Write FFH after the last operation to place device in read array mode.
Status Register Data
Standby
Erase
Confirm
Data = D0H
Addr = Within Block to Be Erased
Block Erase
Successful
Standby
Check SR.1
1 = Device Protect Detect
RP# = V , Block Lock-Bit Is Set
Only required for systems
implementing lock-bit configuration
0
1
Device Protect Error
SR.1 =
Check SR.3
1 = V Error Detect
IH
V Range Error
Figure 7. Automated Block Erase Flowchart
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
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