參數(shù)資料
型號(hào): 28F016SC
廠商: Intel Corp.
英文描述: 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲(chǔ)器)
中文描述: 16兆內(nèi)存SmartVoltage FlashFile(1,600位智能電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 19/42頁(yè)
文件大?。?/td> 725K
代理商: 28F016SC
E
4.8
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
19
PRELIMINARY
Program Suspend Command
The Program Suspend command allows program
interruption to read data in other flash memory
locations. Once the program process starts, writing
the Program Suspend command requests that the
WSM suspend the program sequence at a
predetermined point in the algorithm. The device
continues to output status register data when read
after the Program Suspend command is written.
Polling status register bits SR.7 and SR.2 can
determine when the program operation has been
suspended (both will be set to
“1”). RY/BY# will also
transition to V
. Specification t
WHRH1
defines the
program suspend latency.
At this point, a Read Array command can be written
to read data from locations other than that which is
suspended. The only other valid commands while
program is suspended are Read Status Register
and Program Resume. After Program Resume
command is written to the flash memory, the WSM
will continue the program process. Status register
bits SR.2 and SR.7 will automatically clear and
RY/BY# will return to V
OL
. After the Program
Resume
command
is
automatically outputs status register data when
read (see Figure 10). V
must remain at V
PPH1/2/3
(the same V
PP
level used for program) while in
program suspend mode. RP# must also remain at
V
IH
or V
HH
(the same RP# level used for program).
written,
the
device
4.9
Set Block and Master Lock-Bit
Commands
A flexible block locking and unlocking scheme is
enabled via a combination of block lock-bits and a
master lock-bit. The block lock-bits gate program
and erase operations while the master lock-bit
gates block-lock bit modification. With the master
lock-bit not set, individual block lock-bits can be set
using the Set Block Lock-Bit command. The Set
Master Lock-Bit command, in conjunction with
RP# = V
HH
, sets the master lock-bit. After the
master lock-bit is set, subsequent setting of block
lock-bits requires both the Set Block Lock-Bit
command and V
HH
on the RP# pin. See Table 6 for
a summary of hardware and software write
protection options.
Set block lock-bit and master lock-bit are initiated
using two-cycle command sequence. The set block
or master lock-bit setup along with appropriate
block or device address is written followed by either
the set block lock-bit confirm (and an address within
the block to be locked) or the set master lock-bit
confirm (and any device address). The WSM then
controls the set lock-bit algorithm. After the
sequence is written, the device automatically
outputs status register data when read (see
Figure 11). The CPU can detect the completion of
the set lock-bit event by analyzing the RY/BY# pin
output or status register bit SR.7.
When the set lock-bit operation is complete, status
register bit SR.4 should be checked. If an error is
detected, the status register should be cleared. The
CUI will remain in read status register mode until a
new command is issued.
This two-step sequence of setup followed by
execution ensures that lock-bits are not accidentally
set. An invalid Set Block or Master Lock-Bit
command will result in status register bits SR.4 and
SR.5 being set to “1.” Also, reliable operations
occur only when V
CC
= V
CC2/3
and V
PP
= V
PPH1/2/3
.
In the absence of this high voltage, lock-bit contents
are protected against alteration.
A successful set block lock-bit operation requires
that the master lock-bit be cleared or, if the master
lock-bit is set, that RP# = V
HH
. If it is attempted with
the master lock-bit set and RP# = V
IH
, the operation
will fail, and SR.1 and SR.4 will be set to “1.” A
successful set master lock-bit operation requires
that RP# = V
HH
. If it is attempted with RP# = V
IH
,
the operation will fail, and SR.1 and SR.4 will be set
to “1.” Set block and master lock-bit operations with
V
IH
< RP# < V
HH
produce spurious results and
should not be attempted.
相關(guān)PDF資料
PDF描述
28F008S 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器)
28F0101024K 28F010 1024K (128K X 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY
28F016B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F032B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY