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參數(shù)資料
| 型號： | 28F016SC |
| 廠商： | Intel Corp. |
| 英文描述： | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) |
| 中文描述： | 16兆內(nèi)存SmartVoltage FlashFile（1,600位智能電壓閃速存儲器） |
| 文件頁數(shù)： | 14/42頁 |
| 文件大小： | 725K |
| 代理商： | 28F016SC |
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BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
14
PRELIMINARY
000000
Block 0
Master Lock Configuration
Block 0 Lock Configuration
000001
000002
000003
010000
010002
00FFFF
Device Code
Manufacturer Code
Reserved For
Future Implementation
Block 1
Block 1 Lock Configuration
Reserved for
Future Implementation
Reserved for
Future Implementation
01FFFF
1F0000
1F0002
Block 31 Lock Configuration
Reserved for
Future Implementation
Reserved for
Future Implementation
1FFFFF
Block 31
(Blocks 16 through 30)
(Blocks 8 through 14)
(Blocks 2 through 14)
070000
070002
Block 7
Block 7 Lock Configuration
Reserved for
Future Implementation
Reserved for
Future Implementation
07FFFF
0F0000
0F0002
Block 15
Block 15 Lock Configuration
Reserved for
Future Implementation
Reserved for
Future Implementation
0FFFFF
8-Mbit
16-Mbit
4-Mbit
Figure 6. Device Identifier Code Memory Map
3.5
Read Identifier Codes
Operation
The read identifier codes operation outputs the
manufacturer code, device code, block lock
configuration codes for each block, and master lock
configuration code (see Figure 6). Using the
manufacturer and device codes, the system
software can automatically match the device with its
proper algorithms. The block lock and master lock
configuration codes identify locked and unlocked
blocks and master lock-bit setting.
3.6
Write
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are active
and OE# = V
IH
. The address and data needed to
execute a command are latched on the rising edge
of WE# or CE# (whichever goes high first).
Standard microprocessor write timings are used.
Figure 18 illustrates a write operation.
4.0
COMMAND DEFINITIONS
When the V
PP
voltage
≤
V
PPLK
, read operations
from the status register, identifier codes, or blocks
are enabled. Placing V
PPH1/2/3
on V
PP
enables
successful block erase, program, and lock-bit
configuration operations.
Device operations are selected by writing specific
commands into the CUI. Table 4 defines these
commands.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
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| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
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