- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F016SC (Intel Corp.) 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F016SC |
| 廠商： | Intel Corp. |
| 英文描述： | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) |
| 中文描述： | 16兆內(nèi)存SmartVoltage FlashFile（1,600位智能電壓閃速存儲器） |
| 文件頁數(shù)： | 8/42頁 |
| 文件大?。?/td> | 725K |
| 代理商： | 28F016SC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
E
8
PRELIMINARY
Table 3. Pin Descriptions
(Continued)
Sym
Type
Name and Function
WE#
INPUT
WRITE ENABLE:
Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
RY/BY#
OUTPUT
READY/BUSY#:
Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase, program, or lock-bit configuration).
RY/BY#-high indicates that the WSM is ready for new commands, block erase or
program is suspended, or the device is in deep power-down mode. RY/BY# is
always active.
V
PP
SUPPLY
BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
For erasing array blocks, programming data, or configuring lock-bits.
SmartVoltage Flash
→
3.3 V, 5 V, and 12 V V
PP
With V
PP
≤
V
PPLK
, memory contents cannot be altered. Block erase, program, and
lock-bit configuration with an invalid V
PP
(see DC Characteristics) produce spurious
results and should not be attempted.
V
CC
SUPPLY
DEVICE POWER SUPPLY:
Internal detection automatically configures the device
for optimized read performance. Do not float any power pins.
SmartVoltage Flash
→
2.7 V (Read-Only), 3.3 V, and 5 V V
CC
With V
CC
≤
V
LKO
, all write attempts to the flash memory are inhibited. Device
operations at invalid V
CC
voltages (see DC Characteristics) produce spurious
results and should not be attempted. Block erase, program, and lock-bit
configuration operations with V
CC
< 3.0 V are not supported.
SUPPLY
GROUND:
Do not float any ground pins.
GND
NC
NO CONNECT:
Lead is not internally connected; it may be driven or floated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F008S | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲器) |
| 28F0101024K | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
| 28F010 | 1024K (128K x 8) CMOS FLASH MEMORY |
| 28F016B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F032B3 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SV | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
| 28F016XS | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。