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參數(shù)資料
| 型號(hào)： | 28F016SC |
| 廠商： | Intel Corp. |
| 英文描述： | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲(chǔ)器) |
| 中文描述： | 16兆內(nèi)存SmartVoltage FlashFile（1,600位智能電壓閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 15/42頁(yè) |
| 文件大小： | 725K |
| 代理商： | 28F016SC |
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E
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY
15
PRELIMINARY
Table 3. Bus Operations
Mode
Notes
RP#
CE#
OE#
WE#
Address
V
PP
DQ
0
–7
RY/BY#
Read
1,2,3
V
IH
or
V
HH
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
X
X
D
OUT
X
Output Disable
3
V
IL
V
IH
V
IH
X
X
High Z
X
Standby
3
V
IH
X
X
X
X
High Z
X
Deep Power-Down
4
X
X
X
X
X
High Z
V
OH
V
OH
Read Identifier Codes
V
IL
V
IL
V
IH
See
Figure 5
X
Note 5
Write
3,6,7
V
IL
V
IH
V
IL
X
X
D
IN
X
NOTES:
1. Refer to DC Characteristics When V
PP
≤
V
PPLK
, memory contents can be read, but not altered.
2. X can be V
or V
IH
for control and address input pins and V
PPLK
or V
PPH1/2/3
for V
PP
. See DC Characteristicsfor V
PPLK
and
V
PPH1/2/3
voltages.
3. RY/BY# is V
OL
when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It is V
OH
when the WSM is not busy, in block erase suspend mode (with program inactive), program suspend mode, or deep power-
down mode.
4.
RP# at GND ± 0.2 V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when V
PP
= V
PPH1/2/3
and
V
CC
= V
CC2/3
(see Section 6.2 for operating conditions).
7. Refer to Table 4 for valid D
IN
during a write operation.
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