參數資料
型號: GE28F128W30B90
英文描述: CHIP RESISTOR
中文描述: 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁數: 10/91頁
文件大?。?/td> 994K
代理商: GE28F128W30B90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
10
Datasheet
2.2
Package Diagram
The 1.8 Volt Intel
Wireless Flash memory with is available in a 56 active-ball matrix VF BGA
Chip Scale Package with 0.75 mm ball pitch that is ideal for board-constrained applications.
Figure
1
shows device ballout.
NOTES:
1. On lower density devices, upper address balls can be treated as NC. (Example: For 32-Mbit density, A
23-21
will be NC).
2. See
Appendix C, “Mechanical Specifications” on page 89
for mechanical specifications for the package.
Figure 1. 56-Active-Ball Matrix
A
B
C
D
E
F
G
A
11
A
8
v
SS
v
CC
v
PP
A
18
A
6
A
4
A
12
A
9
A
20
CLK
RST#
A
17
A
5
A
3
A
13
A
10
ADV#
WE#
A
19
A
7
A
2
A
15
A
14
WAIT
A
16
D
12
WP#
A
1
V
CCQ
D
15
D
6
D
4
D
2
D
1
CE#
A
0
V
SS
D
14
D
13
D
11
D
10
D
9
D
0
OE#
D
7
V
SSQ
D
5
v
CC
D
3
V
CCQ
D
8
V
SSQ
A
4
A
6
A
18
v
PP
v
CC
V
SS
A
8
A
11
A
3
A
5
A
17
RST#
CLK
A
20
A
9
A
12
A
2
A
7
WE#
ADV#
A
19
A
10
A
13
A
1
A
14
WP#
D
12
A
16
WAIT
A
15
A
0
CE#
D
1
D
2
D
4
D
6
D
15
V
CCQ
OE#
D
0
D
9
D
10
D
11
D
13
D
14
V
SS
V
SSQ
D
8
V
CCQ
D
3
V
CC
D
5
V
SSQ
D
7
A
B
C
D
E
F
G
Top View - Ball Side Down
Complete Ink Mark Not Shown
Bottom View - Ball Side Up
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
A
21
A
22
A
22
A
21
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