參數資料
型號: GE28F128W30B90
英文描述: CHIP RESISTOR
中文描述: 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁數: 29/91頁
文件大?。?/td> 994K
代理商: GE28F128W30B90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
29
The host programmer must reset its initial verify-word address to the same starting location
supplied during the program phase. It then reissues each data word in the same order as during the
program phase. Like programming, the host may write each subsequent data word to WA
0
or it may
increment up through the block addresses.
The verification phase concludes when the interfacing programmer writes to a different block
address; data supplied must be FFFFh. Upon completion of the verify phase, the device enters the
EFP exit phase.
5.3.5
Exit
SR[7]=1 indicates that the device has returned to normal operating conditions. A full status check
should be performed at this time to ensure the entire block programmed successfully. After EFP
exit, any valid CUI command can be issued.
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
GE28F128W30T90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
GE28F160B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory