- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375996 > GE28F128W30B90 CHIP RESISTOR PDF資料下載
參數(shù)資料
| 型號： | GE28F128W30B90 |
| 英文描述： | CHIP RESISTOR |
| 中文描述： | 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料 |
| 文件頁數(shù)： | 15/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F128W30B90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
15
3.1
Bus Operations
3.1.1
Read
The 1.8 Volt Intel Wireless Flash memory has several read configurations:
Asynchronous page mode read.
Synchronous burst mode read — outputs four, eight, sixteen, or continuous words, from main
blocks and parameter blocks.
Several read modes are available in each partition:
Read-array mode:
read accesses return flash array data from the addressed locations.
Read identifier mode:
reads return manufacturer and device identifier data, block lock status,
and protection register data. Identifier information can be accessed starting at 4-Mbit partition
base addresses; the flash array is not accessible in read identifier mode.
Read query mode:
reads return device CFI data. CFI information can be accessed starting at
4-Mbit partition base addresses; the flash array is not accessible in read query mode.
Read status register mode:
reads return status register data from the addressed partition. That
partition’s array data is not accessible. A system processor can check the status register to
determine an addressed partition’s state or monitor program and erase progress.
All partitions support the synchronous burst mode that internally sequences addresses with respect
to the input CLK to select and supply data to the outputs.
Identifier codes, query data, and status register read operations execute as single-synchronous or
asynchronous read cycles. WAIT is asserted during these reads.
Access to the modes listed above is independent of V
PP
. An appropriate CUI command places the
device in a read mode. At initial power-up or after reset, the device defaults to asynchronous read-
array mode.
Asserting CE# enables device read operations. The device internally decodes upper address inputs
to determine which partition is accessed. Asserting ADV# opens the internal address latches.
Asserting OE# activates the outputs and gates selected data onto the I/O bus. In asynchronous
mode, the address is latched when ADV# is deasserted (when the device is configured to use
Table 4.
Bus Operations
Mode
Notes
RST#
CE#
OE#
WE#
ADV#
WAIT
D[15:0]
Read
4
V
IH
V
IL
V
IL
V
IH
V
IL
See Note
D
OUT
Output Disable
1
V
IH
V
IL
V
IH
V
IH
X
High-Z
High-Z
Standby
1
V
IH
V
IH
X
X
X
High-Z
High-Z
Reset
1,2
V
IL
X
X
X
X
High-Z
High-Z
Write
3
V
IH
V
IL
V
IH
V
IL
V
IL
High-Z
D
IN
NOTES:
1. X must be V
or V
IH
for control pins and addresses.
2. RST# must be at V
± 0.2 V to meet the maximum specified power-down current.
3. Refer to the
Table 6, “Bus Cycle Definitions” on page 19
for valid D
IN
during a write operation.
4. WAIT is only valid during synchronous array read operations.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F128W30T90 | EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC |
| GE28F640W30B70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30B85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F128W30T90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC |
| GE28F160B3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F160B3BC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F160B3TC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F160B3TC80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。