參數(shù)資料
型號(hào)： GE28F128W30B90
英文描述： CHIP RESISTOR
中文描述： 的EEPROM | FLASH動(dòng)畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁(yè)數(shù)： 86/91頁(yè)
文件大?。?/td> 994K
代理商： GE28F128W30B90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
86
Datasheet
Partition Region 1 Information
Offset
(1)
P = 39h
See table below
Address
Len
Bot
2
53:
54:
1
55:
Description
Bottom
(P+1A)h
(P+1B)h
(P+1C)h
Top
(Optional flash features and commands)
(P+1A)h Number of identical partitions within the partition region
(P+1B)h
(P+1C)h
Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Top
53:
54:
55:
(P+1D)h
(P+1D)h
1
56:
56:
(P+1E)h
(P+1E)h
1
57:
57:
(P+1F)h
(P+1F)h
1
58:
58:
(P+20)h
(P+21)h
(P+22)h
(P+23)h
(P+24)h
(P+25)h
(P+26)h
(P+20)h Partition Region 1 Erase Block Type 1 Information
(P+21)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
(P+22)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(P+23)h
(P+24)h Partition 1 (Erase Block Type 1)
(P+25)h
Minimum block erase cycles x 1000
(P+26)h
Partition 1 (erase block Type 1) bits per cell; internal ECC
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 1 (erase block Type 1) page mode and synchronous
mode capabilities defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
4
59:
5A:
5B:
5C:
5D:
5E:
5F:
59:
5A:
5B:
5C:
5D:
5E:
5F:
2
1
(P+27)h
(P+27)h
1
60:
60:
(P+28)h
(P+29)h
(P+2A)h
(P+2B)h
(P+2C)h
(P+2D)h
(P+2E)h
Partition Region 1 Erase Block Type 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(bottom parameter device only)
Partition 1 (Erase block Type 2)
Minimum block erase cycles x 1000
Partition 1 (Erase block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 1 (Erase block Type 2) pagemode and synchronous
mode capabilities defined in Table 10
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
4
61:
62:
63:
64:
65:
66:
67:
2
1
(P+2F)h
1
68:
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
相關(guān)PDF資料
PDF描述
GE28F128W30T90 EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
GE28F640W30B70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30B85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T70 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
GE28F640W30T85 EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GE28F128W30T90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|8MX16|CMOS|BGA|60PIN|PLASTIC
GE28F160B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
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