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參數(shù)資料

型號(hào)：	GE28F128W30B90
英文描述：	CHIP RESISTOR
中文描述：	的EEPROM \| FLASH動(dòng)畫(huà)\| 8M × 16位\|的CMOS \| BGA封裝\| 60PIN \|塑料
文件頁(yè)數(shù)：	43/91頁(yè)
文件大小：	994K
代理商：	GE28F128W30B90

1.8 Volt Intel

Wireless Flash Memory with 3 Volt I/O

Datasheet

8.0

Set Configuration Register

The Set Configuration Register command sets the burst order, frequency configuration, burst

length, and other parameters.

A two-bus cycle command sequence initiates this operation. The configuration register data is

placed on the lower 16 bits of the address bus (A[15:0]) during both bus cycles. The Set

Configuration Register command is written along with the configuration data (on the address bus).

This is followed by a second write that confirms the operation and again presents the configuration

ADV#, CE#, or WE# (whichever occurs first). This command functions independently of the

applied V

voltage. After executing this command, the device returns to read-array mode. The

configuration register’s contents can be examined by writing the Read Identifier command and

then reading location 05h. (See

Table 13

and

Table 14

相關(guān)PDF資料	PDF描述
GE28F128W30T90	EEPROM\|FLASH\|8MX16\|CMOS\|BGA\|60PIN\|PLASTIC
GE28F640W30B70	EEPROM\|FLASH\|4MX16\|CMOS\|BGA\|56PIN\|PLASTIC
GE28F640W30B85	EEPROM\|FLASH\|4MX16\|CMOS\|BGA\|56PIN\|PLASTIC
GE28F640W30T70	EEPROM\|FLASH\|4MX16\|CMOS\|BGA\|56PIN\|PLASTIC
GE28F640W30T85	EEPROM\|FLASH\|4MX16\|CMOS\|BGA\|56PIN\|PLASTIC

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GE28F128W30T90	制造商:未知廠家制造商全稱(chēng):未知廠家功能描述:EEPROM\|FLASH\|8MX16\|CMOS\|BGA\|60PIN\|PLASTIC
GE28F160B3BC70	制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3BC80	制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC70	制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
GE28F160B3TC80	制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory

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