參數(shù)資料
型號: GE28F128W30B90
英文描述: CHIP RESISTOR
中文描述: 的EEPROM | FLASH動畫| 8M × 16位|的CMOS | BGA封裝| 60PIN |塑料
文件頁數(shù): 74/91頁
文件大?。?/td> 994K
代理商: GE28F128W30B90
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
74
Datasheet
11.4
Reset Specifications
Table 24. Reset Specifications
#
Symbol
Parameter
1
Notes
Min
Max
Unit
P1
t
PLPH
RST# Low to Reset during Read
1, 2, 3, 4
100
ns
P2
t
PLRH
RST# Low to Reset during Block Erase
1, 3, 4, 5
20
μs
RST# Low to Reset during Program
1, 3, 4, 5
10
μs
P3
t
VCCPH
VCC Power Valid to Reset
1,3,4,5,6
60
μs
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. The device may reset if t
< t
Min, but this is not guaranteed.
3. Not applicable if RST# is tied to VCC.
4. Sampled, but not 100% tested.
5. If RST# is tied to VCC, the device is not ready until t
occurs after when V
V
Min.
6. If RST# is tied to any supply/signal with V
CCQ
voltage levels, the RST# input voltage must not exceed V
CC
until V
CC
V
CC
Min.
Figure 32. Reset Operations Waveforms
(
A) Reset during
read mode
(B) Reset during
program or block erase
P1
P2
(C) Reset during
program or block erase
P1
P2
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RST# [P]
RST# [P]
RST# [P]
Abort
Complete
Abort
Complete
V
CC
0V
VCC
(D) VCC Power-up to
RST# high
P1
R5
P2
P3
P2
R5
R5
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