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參數(shù)資料
| 型號： | M58WR128EBZB |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 20/87頁 |
| 文件大?。?/td> | 1113K |
| 代理商： | M58WR128EBZB |
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(no wrap). The Wrap Burst bit is used to select be-
tween wrap and no wrap. When the Wrap Burst bit
is set to ‘0’ the burst read wraps; when it is set to
‘1’ the burst read does not wrap.
Burst length Bits (CR2-CR0)
The Burst Length bits set the number of Words to
be output during a Synchronous Burst Read oper-
ation as result of a single address latch cycle.
They can be set for 4 words, 8 words, 16 words or
continuous burst, where all the words are read se-
quentially.
In continuous burst mode the burst sequence can
cross bank boundaries.
In continuous burst mode, in 4, 8 words no-wrap,
or in 16 words, depending on the starting address,
the device asserts the WAIT output to indicate that
a delay is necessary before the data is output.
If the starting address is aligned to a 4 word
boundary no wait states are needed and the WAIT
output is not asserted.
If the starting address is shifted by 1, 2 or 3 posi-
tions from the four word boundary, WAIT will be
asserted for 1, 2 or 3 clock cycles when the burst
sequence crosses the first 64 word boundary, or
the 16 word boundary in the case of 16-word wrap
burst, to indicate that the device needs an internal
delay to read the successive words in the array.
WAIT will be asserted only once during a continu-
ous burst access. See also Table 10, Burst Type
Definition.
CR14, CR5 and CR4 are reserved for future use.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR128ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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