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參數(shù)資料
| 型號(hào)： | M58WR128EBZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 33/87頁(yè) |
| 文件大?。?/td> | 1113K |
| 代理商： | M58WR128EBZB |
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DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 17. Capacitance
Note: Sampled only, not 100% tested.
M58WR128ET, M58WR128EB
Parameter
70
80
100
Units
Min
Max
Min
Max
Min
Max
VDD Supply Voltage
1.7
2.2
1.65
2.2
1.65
2.2
V
VDDQ Supply Voltage
1.7
3.3
1.65
3.3
1.65
3.3
V
VPP Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
V
VPP Supply Voltage (Application environment)
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
-0.4
VDDQ
+0.4
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (CL)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to VDDQ
V
Input and Output Timing Ref. Voltages
VDDQ/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1F
VDD
0.1F
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
68
pF
COUT
Output Capacitance
VOUT = 0V
812
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR128ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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