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參數(shù)資料
| 型號(hào)： | M58WR128EBZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 32/87頁(yè) |
| 文件大?。?/td> | 1113K |
| 代理商： | M58WR128EBZB |
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MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 15. Absolute Maximum Ratings
Value
Symbol
Parameter
Min
Max
Unit
TA
Ambient Operating Temperature
–40
85
°C
TBIAS
Temperature Under Bias
–40
125
°C
TSTG
Storage Temperature
–65
155
°C
VIO
Input or Output Voltage
–0.5
VDDQ+0.6
V
VDD
Supply Voltage
–0.2
2.45
V
VDDQ
Input/Output Supply Voltage
–0.2
3.6
V
VPP
Program Voltage
–0.2
14
V
IO
Output Short Circuit Current
100
mA
tVPPH
Time for VPP at VPPH
100
hours
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR128ET | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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