參數資料
型號: M58WR128EBZB
廠商: 意法半導體
英文描述: 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁數: 73/87頁
文件大?。?/td> 1113K
代理商: M58WR128EBZB
75/87
Figure 27. Erase Suspend & Resume Flowchart and Pseudo Code
Write 70h
AI06175
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues
Write D0h
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
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