參數(shù)資料
型號(hào): M58WR128EBZB
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 54/87頁
文件大小: 1113K
代理商: M58WR128EBZB
58/87
PART NUMBERING
Table 26. Ordering Information Scheme
Table 27. Daisy Chain Ordering Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the ST Sales Office nearest to you.
Example:
M58WR128ET
80 ZB
6
T
Device Type
M58
Architecture
W = Multiple Bank, Burst Mode
Operating Voltage
R = VDD = 1.65V to 2.2V, VDDQ = 1.65V to 3.3V
Device Function
128ET = 128 Mbit (x16), Top Boot
128EB = 128 Mbit (x16), Bottom Boot
Speed
70 = 70 ns
80 = 80 ns
10 = 100 ns
Package
ZB = VFBGA60 12.5 x 12mm, 0.75mm pitch
Temperature Range
6 = –40 to 85°C
Option
T = Tape & Reel packing
Example:
M58WR128E
-ZB
T
Device Type
M58WR128E
Daisy Chain
ZB = VFBGA60 12.5 x 12mm, 0.75mm pitch
Option
T = Tape & Reel Packing
相關(guān)PDF資料
PDF描述
M5913 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5913B1 COMBINED SINGLE CHIP PCM CODEC AND FILTER
M5F78M05 5 V FIXED POSITIVE REGULATOR, PSFM3
M5F78M06 6 V FIXED POSITIVE REGULATOR, PSFM3
M5F78M08 8 V FIXED POSITIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR128ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR128ETZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory